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  75 ohm sp2t rf switch 5 mhz to 3000 mhz f2970 datasheet ? 2016 integrated device technology, inc . 1 november 11, 2016 description the f2970 is a high reliability, low insertion loss, 75 ? absorp tive sp2t rf switch designed for a multitude of cable systems an d other rf applications. this device covers a broad frequen cy range from 5 mhz to 3000 mhz. in addition to providing low insertion loss, the f2970 also delivers excellent linearity and isolation performance while providing a 75 ? termination for t he unselected port. the f2970 uses a single positive supply voltage and suppor ts 3.3 v logic. competitive advantage the f2970 provides broadband rf performance to support t he catv market along with high power handling, and high isolation .  low insertion loss  high isolation  excellent linearity  extended temperature: -40 c to +105 c typical applications  catv/broadband applications  headend  fiber/hfc distribution nodes  distribution amplifiers  switch matrix  dtv tuner input select  dvr/pvr/set-top box  catv test equipment features  low insertion loss:  0.32 db @ 1200 mhz  high isolation:  70 db @ 1200 mhz (rf1/rf2 to rfc)  excellent linearity:  iip3 of 63 dbm  selectable logic control  operating temperature: -40 c to +105 c  4 mm x 4 mm 20-pin lqfn package block diagram figure 1. block diagram rf2 rf1 rfc c 1 75 ? 75 ? c 2
f2970 datasheet ? 2016 integrated device technology, inc . 2 november 11, 2016 figure 2. pin assignments for 4 mm x 4 mm x 0.75 mm 20 -pin lqfn, ncg20 C top view pin descriptions table 1. pin descriptions number name description 1, 2, 4, 5, 6, 7, 9, 10, 11, 12, 14, 15, 18, 19 gnd ground these pins as close to the device as possible . 3 rf1 rf1 port. matched to 75 ohms. if this pin is not 0v dc, then an external coupling capacitor must be used. 8 rfc rfc port. matched to 75 ohms. if this pin is not 0v dc, then an external coupling capac itor must be used. 13 rf2 rf2 port. matched to 75 ohms. if this pin is not 0v dc, then an external coupling capacitor must be used. 16 c2 control pin to set switch state. see table 8 . 17 c1 control pin t o set switch state. see table 8 . 20 v dd power supply. bypass to gnd with capacitors shown in th e typical application circuit as close as possible to pin. ep exposed pad. internally connected to gnd. solder this exposed pad to a pcb pad that uses multiple ground vias to provide heat transfer out of the devic e into the pcb ground planes. these multiple ground vias are also required to achieve the specified rf perform ance. pin assignments
f2970 datasheet ? 2016 integrated device technology, inc . 3 november 11, 2016 absolute maximum ratings stresses beyond those listed below may cause permanent damage to the device. functional operation of the device at these or any other conditions beyond those indicated in the operational secti on of this specification is not implied. exposure to absolu te maximum rating conditions for extended periods may affect device reliability . table 2. absolute maximum ratings parameter symbol minimum maximum units v dd to gnd v dd - 0.3 4.0 v c1, c2 to gnd v logic -0.3 lower of (v dd +0.3, 3.9) v rf1, rf2, rfc to gnd v rf - 0.3 +0.3 v maximum input cw power [a] rf1 or rf2 as an input (connected to rfc) p abs 30 dbm rfc as an input (connected to rf1 or rf2) 30 rf1 or rf2 as an input (terminated states) 26 maximum junction temperature t jmax 140 c storage temperature range t st - 65 150 c lead temperature (soldering, 10s) t lead 260 c electrostatic discharge C hbm (jedec/esda js-001-2012) v esdhbm 2000 (class 2) v electrostatic discharge C cdm (jedec 22-c101f) v esdcdm 1 500 (class c3) v a. levels based on: v dd = 2.7 v to 3.6 v, 5 mhz f rf 3000 mhz, tc = 105 c, z s = z l = 75 ohms.
f2970 datasheet ? 2016 integrated device technology, inc . 4 november 11, 2016 recommended operating conditions table 3. recommended operating conditions parameter symbol condition min typ max units supply voltage v dd 2.7 3.6 v operating temp range t case exposed paddle temperature - 40 +1 0 5 c rf frequency range f rf 5 3 000 mhz rf continuous input cw power (non-switched) [a] p rf rfc connected to rf1 or rf2 t c = 85c 2 7 dbm t c = 105c 27 rf1 / rf2 input, terminated state t c = 85c 24 t c = 105c 21 rf continuous input power (rf hot switching cw) [a] p rfsw rfc input switching between rf1 and rf2 t c = 85c 21 dbm t c = 105c 21 rf1 or rf2 as input, switched between rfc and term. t c = 85c 17 t c = 105c 17 rf1 port impedance z rf 1 single ended 75 rf2 port impedance z rf2 single ended 75 rfc port impedance z rfc single ended 75 a. levels based on: v dd = 2.7 v to 3.6 v, 5 mhz f rf 3000 mhz, z s = z l = 75 ohms. see figure 3 for power handling derating vs rf frequency. figure 3. maximum rf input operating power vs. rf freque ncy
f2970 datasheet ? 2016 integrated device technology, inc . 5 november 11, 2016 electrical characteristics table 4. electrical characteristics typical application circuit: v dd = 3.0 v, t c = +25 c, f rf = 1200 mhz, driven port = rf1 or rf2, input power = 0 dbm, z s = z l = 75 ohms. pcb board trace and connector losses are de-embedded unless otherwise noted. parameter symbol condition minimum typical maximum units logic input high threshold [c] v ih 2.7 v v dd 3.6 v 0.7 x v dd [a] v dd v logic input low threshold [c] v il -0.3 [b] 0.3 x v dd v logic current i ih , i il for each control pin 180 500 n a v dd dc current [c] i dd logic inputs at gnd or v dd 20 30 a insertion loss il 5 C 250 mhz 0.25 db 250 C 750 mhz 0.3 0 750 C 1000 mhz 0. 3 0 1000 C 1200 mhz 0. 32 0.57 1200 C 2000 mhz 0. 32 2000 C 3000 mhz 0. 35 isolation (rfc to rf1 / rf2) iso rfc 5 C 250 mhz 79 84 db 250 C 750 mhz 69 74 750 C 1000 mhz 67 72 1000 C 1200 mhz 65 70 1200 C 2000 mhz 62 67 2000 C 3000 mhz 57 isolation (rf1 to rf2) iso r12 5 C 250 mhz 79 84 db 250 C 750 mhz 69 74 750 C 1000 mhz 66 71 1000 C 1200 mhz 6 3 6 8 1200 C 2000 mhz 5 7 6 2 2000 C 3000 mhz 5 3 rf1, rf2, rfc return loss (insertion loss state) rl il 5 C 250 mhz 25 db 250 C 750 mhz 20 750 C 1000 mhz 18 1000 C 1200 mhz 18 1200 C 2000 mhz 18 2000 C 3000 mhz 18 a. items in min/max columns in bold italics are guaranteed by test. b. items in min/max columns that are not bold/italics are guaran teed by design characterization. c. increased i dd current will result if logic low level is above ground and up to v il max. similarly, increased i dd current will result if logic high level is below v dd and down to v ih min.
f2970 datasheet ? 2016 integrated device technology, inc . 6 november 11, 2016 electrical characteristics table 5. electrical characteristics typical application circuit: v dd = 3.0 v, t c = +25 c, f rf = 1200 mhz, driven port = rf1 or rf2, input power = 0 dbm, z s = z l = 75 ohms. pcb board trace and connector losses are de-embedded unless otherwise noted. parameter symbol condition min typ max units rf1, rf2 return loss (terminated state) rl term 5 C 250 mhz 27 db 250 C 750 mhz 22 750 C 1000 mhz 20 1000 C 1200 mhz 20 1200 C 2000 mhz 20 2000 C 3000 mhz 17 input 1db compression [c] icp 1db 5 C 250 mhz 29 [b] 31 dbm 250 C 2000 mhz 30 32 input ip2 (insertion loss state) iip2 pin = 13 dbm / tone (f1 + f2 frequency) f1 = 5 mhz f2 = 6 mhz 95 dbm f1 = 185 mhz f2 = 190 mhz 103 f1 = 895 mhz f2 = 900 mhz 129 input ip3 (insertion loss state) iip3 pin = 13 dbm / tone f1 = 5 mhz f2 = 6 mhz 63 dbm f1 = 185 mhz f2 = 190 mhz 63 f1 = 1790 mhz f2 = 1795 mhz 63 ctb / cso 77 & 110 channels p out = 44 dbmv -90 dbc non-rf driven spurious [d] spur max out any rf port when externally terminated into 75 ? -128 dbm switching time [e] t sw 50% control to 90% rf 2.7 s 50% control to 10% rf 2.7 maximum switching rate [f] sw rate 25 khz maximum video feed-through on rf ports vid ft peak transient during switching measured with 20 ns risetime, 0 to 3.3 v control pulse rise 1.0 mv pp fall 1.5 a. items in min/max columns in bold italics are guaranteed by test. b. items in min/max columns that are not bold/italics are guaran teed by design characterization. c. the input 1 db compression point is a linearity figure of me rit. refer to the recommended operating conditions section and figure 3 for the maximum operating power levels. d. spurious due to on-chip negative voltage generator. spu rious fundamental = approx. 2.2 mhz. e. f rf = 1000 mhz. f. minimum time required between switching of states = 1/ (maximum switching rate).
f2970 datasheet ? 2016 integrated device technology, inc . 7 november 11, 2016 thermal characteristics table 6. package thermal characteristics parameter symbol value units junction to ambient thermal resistance. ja 53 c/w junction to case thermal resistance. (case is defined as the exposed paddle) jc 13.8 c/w moisture sensitivity rating (per j - std - 020) msl 1 typical operating conditions (toc)  v dd = +3.0 v  z l = z s = 75?  t case = 25c  f rf = 1200 mhz  small signal parameters measured with p in = 0 dbm  two tone parameters measured with p in = 13 dbm/tone  driven port is rf1 or rf2  all temperatures are referenced to the exposed paddle.  evaluation kit traces and connector losses are de-embedded.
f2970 datasheet ? 2016 integrated device technology, inc . 8 november 11, 2016 typical performance characteristics [1] figure 4. insertion loss vs. frequency over temperature and v dd [rf1] figure 5. insertion loss vs. frequency over temperature and v dd [rf2] figure 6. isolation vs. frequency over temp and v dd [rf1 to rf2, rf1 selected] figure 7. isolation vs. frequency over temp and v dd [rf2 to rf1, rf2 selected] figure 8. isolation vs. frequency over temp and v dd [rf2 to rfc, rf1 selected] figure 9. isolation vs. frequency over temp and v dd [rf1 to rfc, rf2 selected] -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 0 500 1000 1500 2000 2500 3000 loss (db) frequency (mhz) 2.7v -40c 3v -40c 3.6v -40c 2.7v 25c 3v 25c 3.6v 25c 2.7v 105c 3v 105c 3.6v 105c -1 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 0 500 1000 1500 2000 2500 3000 loss (db) frequency (mhz) 2.7v -40c 3v -40c 3.6v -40c 2.7v 25c 3v 25c 3.6v 25c 2.7v 105c 3v 105c 3.6v 105c -120 -110 -100 -90 -80 -70 -60 -50 -40 0 500 1000 1500 2000 2500 3000 isolation (db) frequency (mhz) 2.7v -40c 3v -40c 3.6v -40c 2.7v 25c 3v 25c 2.7v 105c 3v 105c 3.6v 25c 3.6v 105c -120 -110 -100 -90 -80 -70 -60 -50 -40 0 500 1000 1500 2000 2500 3000 isolation (db) frequency (mhz) 2.7v -40c 3v -40c 3.6v -40c 2.7v 25c 3v 25c 3.6v 25c 2.7v 105c 3v 105c 3.6v 105c -120 -110 -100 -90 -80 -70 -60 -50 -40 0 500 1000 1500 2000 2500 3000 isolation (db) frequency (mhz) 2.7v -40c 3v -40c 3.6v -40c 2.7v 25c 3v 25c 3.6v 25c 2.7v 105c 3v 105c 3.6v 105c -120 -110 -100 -90 -80 -70 -60 -50 -40 0 500 1000 1500 2000 2500 3000 isolation (db) frequency (mhz) 2.7v -40c 3v -40c 3.6v -40c 2.7v 25c 3v 25c 3.6v 25c 2.7v 105c 3v 105c 3.6v 105c
f2970 datasheet ? 2016 integrated device technology, inc . 9 november 11, 2016 typical performance characteristics [2] figure 10. rf1 return loss vs. frequency over temperature and v dd [rf1 selected] figure 11. rf2 return loss vs. frequency over temperature and v dd [rf2 selected] figure 12. rf1 return loss vs. frequency over temperature and v dd [rf2 selected] figure 13. rf2 return loss vs. frequency over temperature and v dd [rf1 selected] figure 14. rfc return loss vs. frequency over temperature and v dd [rf1 selected] figure 15. rfc return loss vs. frequency over temperature and v dd [rf2 selected] -80 -70 -60 -50 -40 -30 -20 -10 0 0 500 1000 1500 2000 2500 3000 return loss (db) frequency (mhz) 2.7v -40c 3v -40c 3.6v -40c 2.7v 25c 3v 25c 3.6v 25c 2.7v 105c 3v 105c 3.6v 105c -80 -70 -60 -50 -40 -30 -20 -10 0 0 500 1000 1500 2000 2500 3000 return loss (db) frequency (mhz) 2.7v -40c 3v -40c 3.6v -40c 2.7v 25c 3v 25c 3.6v 25c 2.7v 105c 3v 105c 3.6v 105c -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0 500 1000 1500 2000 2500 3000 return loss (db) frequency (mhz) 2.7v -40c 3v -40c 3.6v -40c 2.7v 25c 3v 25c 3.6v 25c 2.7v 105c 3v 105c 3.6v 105c -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0 500 1000 1500 2000 2500 3000 return loss (db) frequency (mhz) 2.7v -40c 3v -40c 3.6v -40c 2.7v 25c 3v 25c 3.6v 25c 2.7v 105c 3v 105c 3.6v 105c -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0 500 1000 1500 2000 2500 3000 return loss (db) frequency (mhz) 2.7v -40c 3v -40c 3.6v -40c 2.7v 25c 3v 25c 3.6v 25c 2.7v 105c 3v 105c 3.6v 105c -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0 500 1000 1500 2000 2500 3000 return loss (db) frequency (mhz) 2.7v -40c 3v -40c 3.6v -40c 2.7v 25c 3v 25c 3.6v 25c 2.7v 105c 3v 105c 3.6v 105c
f2970 datasheet ? 2016 integrated device technology, inc . 10 november 11, 2016 typical performance characteristics [3] figure 16. evaluation board loss vs. frequency over temperature figure 17. eval board through line return loss vs. frequency over temperature figure 18. switching time insertion loss to isolation figure 19. switching time isolation to insertion loss figure 20. idd vs. control voltage; vdd=2.7v (c1 set to gnd and vdd) figure 21. idd vs. control voltage; vdd=2.7v (c1 set to 0.6v and 2.1v) -0.35 -0.30 -0.25 -0.20 -0.15 -0.10 -0.05 0.00 0 500 1000 1500 2000 2500 3000 loss (db) frequency (mhz) -40c 25c 105c -70 -60 -50 -40 -30 -20 -10 0 0 500 1000 1500 2000 2500 3000 return loss (db) frequency (mhz) -40c 25c 105c 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0 0.5 1 1.5 2 2.5 3 idd (ma) c2 voltage (v) c1=gnd -40c c1=vdd -40c c1=gnd 25c c1=vdd 25c c1=gnd 105c c1=vdd 105c 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0 0.5 1 1.5 2 2.5 3 idd (ma) c2 voltage (v) c1=0.6v -40c c1=2.1v -40c c1=0.6v 25c c1=2.1v 25c c1=0.6v 105c c1=2.1v 105c
f2970 datasheet ? 2016 integrated device technology, inc . 11 november 11, 2016 typical performance characteristics [4] figure 22. idd vs. control voltage; vdd=3.0v (c1 set to gnd and vdd) figure 23. idd vs. control voltage; vdd=3.0v (c1 set to 0.9v and 2.1v) figure 24. idd vs. control voltage; vdd=3.6v (c1 set to gnd and vdd) figure 25. idd vs. control voltage; vdd=3.6v (c1 set to 0.9v and 2.7v) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0 0.5 1 1.5 2 2.5 3 idd (ma) c2 voltage (v) c1=gnd -40c c1=vdd -40c c1=gnd 25c c1=vdd 25c c1=gnd 105c c1=vdd 105c 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0 0.5 1 1.5 2 2.5 3 idd (ma) c2 voltage (v) c1=0.9v -40c c1=2.1v -40c c1=0.9v 25c c1=2.1v 25c c1=0.9v 105c c1=2.1v 105c 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0 0.5 1 1.5 2 2.5 3 3.5 4 idd (ma) c2 voltage (v) c1=gnd -40c c1=vdd -40c c1=gnd 25c c1=vdd 25c c1=gnd 105c c1=vdd 105c 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0 0.5 1 1.5 2 2.5 3 3.5 4 idd (ma) c2 voltage (v) c1=0.9v -40c c1=2.7v -40c c1=0.9v 25c c1=2.7v 25c c1=0.9v 105c c1=2.7v 105c
f2970 datasheet ? 2016 integrated device technology, inc . 12 november 11, 2016 evaluation kit picture figure 26. top view figure 27. bottom view
f2970 datasheet ? 2016 integrated device technology, inc . 13 november 11, 2016 evaluation kit / applications circuit figure 28. electrical schematic
f2970 datasheet ? 2016 integrated device technology, inc . 14 november 11, 2016 table 7. bill of material (bom) part reference qty description manufacturer part # manufacturer c1 C c6 6 not installed c7 1 1000 pf 5%, 50v, c0g ceramic capacitor (0603) grm1885c1h102j murata r1 C r3 3 0 ohm 1%, 1/10w, resistor (0402) erj - 2rkf1000x panasonic j1 C j5 5 connector type f 222181 amphenol rf j7 1 conn header vert 8x2 pos gold 961216 - 6404 - ar 3m u1 1 sp2 t switch 4 mm x 4 mm lqfn f2970 ncgk idt 1 printed circuit board f2970 evkit rev 01 idt
f2970 datasheet ? 2016 integrated device technology, inc . 15 november 11, 2016 control mode table 8 switch control truth table c1 c2 rfc C rf1 rfc C rf2 75 ohm terminated ports 0 0 on off rf2 0 1 off on rf1 1 0 off on rf1 1 1 on off rf2 evaluation kit operation default start-up control pins do not include internal pull-down resistors to logic low or pull-up resistors to logic high. power supplies a common v cc power supply should be used for all pins requiring dc pow er. all supply pins should be bypassed with external capa citors to minimize noise and fast transients. supply noise can degrade noise figure and fast transients can trigger esd clamps and cause them to fail. supply voltage change or transients should have a slew r ate smaller than 1v / 20 us. in addition, all control pins should remain at 0v (+/- 0.3v) while the supply voltage ramps or while it returns to zero. control pin interface if control signal integrity is a concern and clean signals c annot be guaranteed due to overshoot, undershoot, r inging, etc., the following circuit at the input of each control pin is recommended. this appli es to control pins 16 & 17 as shown below. figure 29. control pin interface schematic
f2970 datasheet ? 2016 integrated device technology, inc . 16 november 11, 2016 external supply setup set up a v cc power supply in the voltage range of 2.7 v to 3.6 v w ith the power supply output disabled. logic control setup external logic control is applied to j8 ctl1 (pins 5 and 7) and ctl2 (pins 9 and 11). see table 8 for the logic trut h table. turn on procedure setup the supplies and evkit as noted in the external su pply setup and logic control setup sections above. enable the v cc supply. set the desired logic setting to achieve the desired co nfiguration (see table 8). note that external control log ic should not be applied without v cc being present. turn off procedure set the logic control to a logic low. disable the v cc supply.
f2970 datasheet ? 2016 integrated device technology, inc . 17 november 11, 2016 package drawings figure 30. package outline drawing
f2970 datasheet ? 2016 integrated device technology, inc . 18 november 11, 2016 recommended land pattern figure 31. recommended land pattern
f2970 datasheet ? 2016 integrated device technology, inc . 19 november 11, 2016 ordering information orderable part number package msl rating shipping packaging temperature f2970ncgk 4.00 x 4.00 x 0.75 mm lqfn msl1 bulk - 40 to +105c F2970NCGK8 4.00 x 4.00 x 0.75 mm lqf n msl1 tape and reel - 40 to +105c f2970evbi evaluation board marking diagram 1. line 1 and 2 are the part number. 2. line 3 - ze are for die version. 3. line 3 - yww is last digit of the year plus work wee k. 4. line 3 - pbg denotes the production process.
corporate headquarters 6024 silver creek valley road san jose, ca 95138 www.idt.com sales 1-800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com/go/sales tech support www.idt.com/go/support disclaimer integrated device technology, inc. (idt) reserves the right to modify the products and/or s pecifications described herein at any time, without notice, at idt's sole discretion. performance spec ifications and operating parameters of the described products are determined in an independent state and are not guar anteed to perform the same way when installed in cu stomer products. the information contained herein i s provided without representation or warranty of any kind, whe ther express or implied, including, but not limited to, the suitability of idt's products for any part icular purpose, an implied warranty of merchantabil ity, or non-infringement of the intellectual property rights of others. this do cument is presented only as a guide and does not co nvey any license under intellectual property rights of idt or any third parties. idt's products are not intended for use in applicat ions involving extreme environmental conditions or in life support systems or similar devices where th e failure or malfunction of an idt product can be r easonably expected to significantly affect the health or safety of users. anyone using an idt product in such a manner does so at their own risk, absent an express, written ag reement by idt. integrated device technology, idt and the idt logo are trademarks or registered trademarks of idt and its subsidiaries in the united states and other cou ntries. other trademarks used herein are the proper ty of idt or their respective third party owners. for datasheet type d efinitions and a glossary of common terms, visit www.idt.com/go/glossary . all contents of this document are copyright of in tegrated device technology, inc. all rights reserved f2970 datasheet ? 2016 integrated device technology, inc . 20 november 11, 2016 revision history revision revision date description of change o 2016 - november - 10 initial release


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